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PolarHT TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
IXFH 110N10P
IXFV 110N10P
IXFV 110N10PS
V DSS = 100 V
I D25 = 110 A
R DS(on) ≤ 15 m ?
t rr ≤ 150 ns
Symbol
Test Conditions
Maximum Ratings
TO-247 (IXFH)
V DSS
V DGR
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C; R GS = 1 M ?
100
100
V
V
V GSS
V GSM
Continuous
Transient
± 20
± 30
V
V
G
D
S
(TAB)
I D25
I D(RMS)
I DM
I AR
E AR
T C = 25 ° C
External lead current limit
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
110
75
250
60
40
A
A
A
A
mJ
PLUS220 (IXFV)
E AS
dv/dt
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
1.0
10
J
V/ns
G
D
S
D (TAB)
T J ≤ 150 ° C, R G = 4 ?
P D
T J
T JM
T stg
T C = 25 ° C
480
-55 ... +175
175
-55 ... +150
W
° C
° C
° C
PLUS220SMD (IXFV...S)
T L
T SOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
° C
° C
G
S
D (TAB)
M d
Mounting torque
(TO-247)
1.13/10 Nm/lb.in.
Fast intrinsic diode
F C
Weight
Mounting Force
TO-247
PLUS220
(PLUS220)
11..65 / 2.5..15
6
4
N/lb
g
g
G = Gate
S = Source
Features
l
D = Drain
TAB = Drain
l
International standard packages
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
BV DSS V GS = 0 V, I D = 250 μ A
Characteristic Values
Min. Typ. Max.
100 V
l
l
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
V GS(th)
V DS = V GS , I D = 4 mA
2.5
5.0
V
Easy to mount
I GSS
V GS = ± 20 V DC , V DS = 0
± 100
nA
Advantages
l
I DSS
V DS = V DSS
V GS = 0 V
T J = 150 ° C
25
250
μ A
μ A
l
l
Space savings
High power density
R DS(on)
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
15
m ?
? 2006 IXYS All rights reserved
DS99212E(01/06)
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IXFV12N80PS 功能描述:MOSFET 12 Amps 800V 0.85 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube